Kinematical x-ray diffraction in nonuniform crystalline films: Strain and damage distributions in ion-implanted garnets
- Creators
- Speriosu, V. S.
Abstract
A kinematical model for general Bragg case x-ray diffraction in nonuniform films is presented. The model incorporates depth-dependent strain and spherically symmetric Gaussian distribution of randomly displaced atoms. The model is applicable to ion-implanted, diffused, and other single crystals. Layer thickness is arbitrary, provided maximum reflecting power is less than ~6%. Strain and random displacement (damage) distributions in He+-implanted Gd, Tm, Ga:YIG, and Ne+-implanted Gd3Ga5O2 are obtained by fitting the model to experimental rocking curves. In the former crystal the layer thickness was 0.89 µm with strain varying between 0.09 and 0.91%. In the latter crystal a wide range of strain and damage was obtained using successively higher doses. In each case layer thickness was 1900 Å, with 2.49% strain corresponding to 0.40-Å standard deviation of random displacements. The strain distributions were strictly linear with dose. The same, closely linear relationship between damage and implantation-induced strain was determined for both crystals.
Additional Information
Copyright © 1981 American Institute of Physics. (Received 23 March 1981; accepted for publication 22 June 1981) Thanks are due to C.H. Wilts for his continued support and for a careful reading of the manuscript. The contribution of H.L. Glass in the form of helpful discussions is gratefully acknowledged. B.M. Paine is thanked for the ion implantation of the GGG samples. Technical assistance by L.A. Moudy is acknowledged.Files
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Additional details
- Eprint ID
- 10205
- Resolver ID
- CaltechAUTHORS:SPEjap81
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2008-04-16Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field