Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice
Abstract
Using double-crystal x-ray rocking curves, depth profiles of parallel and perpendicular strain were obtained in a GaAs0.14P0.86/GaP superlattice grown on a buffer layer on (100) GaP. Combining symmetric Fe Kα1 (400) and asymmetric Cu Kα1 (422) reflections, a constant parallel strain of 0.19% relative to the substrate was found throughout the superlattice and buffer layer. Relative to the substrate, the perpendicular strain was found to be 0.26% in the buffer, and 0.80% and −0.19% in the 176-Å-thick superlattice GaAsxP1−x and GaP layers, respectively. The strain profiles indicate the buffer is ~80% decoupled from the substrate by misfit dislocations near the buffer/substrate interface, and the lattice misfit in the superlattice is elastically accommodated by the epitaxial structure with a small shift in the average lattice constant relative to the equilibrium superlattice structure.
Additional Information
© 1984 American Institute of Physics. Received 6 March 1984; accepted 18 May 1984. The work of the Caltech group was supported by the Defense Advanced Research Projects Agency (MDA 903-82-C-0348) (S. Roosild) and the work of the Sandia National Laboratories group was supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.Files
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Additional details
- Eprint ID
- 10192
- Resolver ID
- CaltechAUTHORS:SPEapl84
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2008-04-16Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field