Published September 1, 1988
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WxN1–x alloys as diffusion barriers between Al and Si
Abstract
Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
Additional Information
© 1988 American Institute of Physics. We thank R. Pieters-Emerick for help in manuscript preparation. This work is supported by the Army Research Office under Contract No. DAAG29-85-K-0192. Dr. D. B. Rutledge is gratefully acknowledged for granting us access to his HP Semiconductor Parameter Analyzer and photolithographic facilities.Files
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