Published September 25, 1989
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Journal Article
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Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures
- Creators
- Söderström, J. R.
- Chow, D. H.
- McGill, T. C.
Abstract
We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region.
Additional Information
Copyright © 1989 American Institute of Physics. Received 24 April 1989; accepted 19 July 1989. We acknowledge the support of the of the Air Force Office of Scientific Research under grant No. 86-0306. Two of us (JRS and DHC) are thankful for financial support from the Sweden-America Foundation and TRW, respectively.Files
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