Published August 10, 1992
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Journal Article
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Nanometer-scale GaAs clusters from organometallic precursors
Abstract
We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs particles in the 10–20 nm range. The influence of growth temperature and reactant concentration on cluster morphology is discussed.
Additional Information
© 1992 American Institute of Physics. Received: 23 March 1992; accepted: 26 May 1992. This work was supported by NSF Grant No. CTS-8912328 and the Powell Foundation. PCS acknowledges support by the ATT Foundation.Attached Files
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Additional details
- Eprint ID
- 5718
- Resolver ID
- CaltechAUTHORS:SERapl92
- CTS-8912328
- NSF
- AT&T Foundation
- Created
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2006-10-30Created from EPrint's datestamp field
- Updated
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2023-04-19Created from EPrint's last_modified field