Photoresponse of GaAs/AlAs heterostructures under external bias
Abstract
Results of a photoresponse technique which has been employed to study the photovoltaic properties of GaAs/AlAs heterostructures are presented. The structures consist of a thin layer of AlAs (50 or 200 Å thick) sandwiched between layers of GaAs which were several microns thick. The experimental procedure consisted of illuminating these structures with chopped light while also applying a constant dc bias across the samples. The resulting photovoltage across the sample was then measured as a function of the wavelength of the incident light. It has been found that the application of a dc bias can increase (by several orders of magnitude in some cases) the magnitude of the photovoltage signal compared with that observed when no dc bias is applied. The dc bias was found to shift the photovoltage spectrum to slightly longer wavelengths.
Additional Information
© 1985 American Vacuum Society. (Received 14 February 1985; accepted 4 April 1985) The authors would like to acknowledge R.T. Collins, R.S. Bauer, T.L. Paoli, R. Thornton, D.I. Smith, and W. Streifer for valuable discussions and are grateful to H. Chung, R.D. Yingling, Jr., F. Endicot, M. Bernstein, M. Mosby, J. Walker, A. Alimonda, and G.L. Harnagel for technical assistance with this work. One of us (TES) received financial assistance from the Natural Sciences and Engineering Research Council of Canada. This work was supported in part by the Office of Naval Research under Contract No. N00014-82-K-0556.Files
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- CaltechAUTHORS:SCHLjvstb85
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2008-05-02Created from EPrint's datestamp field
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