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Published December 1, 1998 | public
Journal Article Open

Fractal capacitors

Abstract

A linear capacitor structure using fractal geometries is described. This capacitor exploits both lateral and vertical electric fields to increase the capacitance per unit area. Compared to standard parallel-plate capacitors, the parasitic bottom-plate capacitance is reduced. Unlike conventional metal-to-metal capacitors, the capacitance density increases with technology scaling. A classic fractal structure is implemented with 0.6-μm metal spacing, and a factor of 2.3 increase in the capacitance per unit area is observed. It is shown that capacitance boost factors in excess of ten may be possible as technology continues to scale. A computer-aided-design tool to automatically generate and analyze custom fractal layouts has been developed.

Additional Information

© Copyright 1998 IEEE. Reprinted with permission. Manuscript received April 10, 1998; revised July 15, 1998. The authors would like to acknowledge D. K. Shaeffer and H. Rategh for helpful discussions.

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