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Published August 1, 1986 | public
Journal Article Open

Confocal unstable-resonator semiconductor laser

Abstract

GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.90 full width at half maximum was measured.

Additional Information

© Copyright 1986 Optical Society of America Received January 21, 1986; accepted May 20, 1986 This research is supported by grants from the U.S. Army Research Office, the U.S. Air Force Office of Scientific Research, and the U.S. Office of Naval Research and by contract NAS7-918 with the National Aeronautics and Space Administration. J. Salzman would like to acknowledge the support of the Bantrell Postdoctoral Fellowship and the Fulbright Fellowship. R. Lang would like to acknowledge the support of the National Science Foundation.

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Created:
August 22, 2023
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October 16, 2023