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Published June 15, 1988 | public
Journal Article Open

Band structure of ZnSe-ZnTe superlattices

Abstract

We report the first study of the band structure of ZnSe-ZnTe superlattices. Our calculations are based on second order k⋅p theory and include the effects of strain and spin-orbit splitting on the superlattice band structure. Since the valence-band offset for this system is not well known, we have investigated the dependence of the superlattice band gap on the valence-band offset. Based on the assumption that the photoluminescence from the superlattice is due to an isoelectronic Te1-bound exciton in ZnSe, we have fitted the experimental photoluminescence data with k⋅p theory to obtain the best value of the valence-band offset. The value we find is 0.975±0.098 eV. Alternatively, assuming that the photoluminescence is due to band-to-band transitions we obtain a valence-band offset of 1.196±0.134 eV. We have also calculated the superlattice band gap as a function of the constituent-material-layer thicknesses for the first valence-band offset quoted. We expect these results to be important in gaining an understanding of the value of the band offset, and the nature of the photoluminescence from this system.

Additional Information

©1988 The American Physical Society. Received 13 October 1987. Parts of this work were supported by the U.S. Defense Advanced Research Projects Agency under Contract No. N00014-K-86-0841. We would also like to acknowledge useful discussions with J.O. McCaldin, T. Yao, P. Zampardi, and D.H. Chow.

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