Thermal oxidation of amorphous ternary Ta36Si14N50 thin films
Abstract
The oxidation kinetics of reactively sputtered amorphous Ta36Si14N50 thin films are studied in dry and wet ambient in the temperature range of 650-850-degrees-C by backscattering spectrometry, Dektak profilometer, and x-ray diffraction analyses. The dry oxidation is well described by a parabolic time dependence which corresponds to a process controlled by the diffusion of the oxidant in the oxide. The growth of the oxide in wet ambient is initially very rapid and then proceeds linearly which means that the process is reaction limited. Both oxidation rates are thermally activated. The activation energies are 2.0 eV for dry and 1.4 eV for wet ambient. The pre-exponential factors are 0.17 x 10^(16) angstrom 2/min and 7.4 x 10^(8) angstrom/min, respectively. Both the dry and wet oxidation of the amorphous ternary Ta36Si14N50 film result in the formation of an x-ray amorphous Ta14Si5.5O80 layer.
Additional Information
Copyright © 1991 American Institute of Physics. Received 25 March 1991; accepted 6 June 1991. P. J. Pokela gratefully acknowledges a fellowship provided by the Academy of Finland. Also, we wish to thank the Finnish Culture Foundation and the Lohja Corporation for financial support. The authors are grateful to R. Gorris and B. Stevens for their technical assistance and R. Sampley for her contribution in manuscript preparation. The work was also partly supported by the U.S. Army Research Office and a grant from Intel Corporation.Files
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