Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
- Creators
- Olowolafe, J. O.
- Nicolet, M.-A.
- Mayer, J. W.
Abstract
We have measured the kinetic rate of formation of CrSi2 using 2.0-MeV 4He + backscattering spectrometry. CrSi2 was formed on single-crystal 100- and 111-oriented Si and on Pd2Si grown on 100 Si. For both Si-Cr and Si-Pd2Si-Cr samples the rate of growth of CrSi2 is linear in time with an activation energy of 1.7±0.1 eV and a value of 0.7 Å/sec at 450°C. For all annealing temperatures, the growth becomes nonlinear at long annealing times. The nonlinearity is attributed to a contaminant, probably oxygen. On Pd2Si, CrSi2 starts to form at about 400°C, while on Si, CrSi2 formation is observed at 450°C and above. The difference in formation temperatures is due to contamination at the Si-Cr interface, quite probably a thin oxide layer. The growth rate of CrSi2 in the Si-Pd2Si-Cr samples is independent of the thickness of Pd2Si.
Additional Information
Copyright © 1976 American Institute of Physics. Received 21 July 1976. The authors are grateful to S. S. Lau, J. Poate, and R. Shima for their interest and helpful suggestions. They also thank J. Mallory and R. Gorris for technical assistance.Files
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Additional details
- Eprint ID
- 2949
- Resolver ID
- CaltechAUTHORS:OLOjap76
- Created
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2006-05-08Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field