Published November 1, 1974
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GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers
Abstract
We report laser oscillation at 80–100°K in electrically pumped GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1–xAlxAs layer. The lowest threshold current density was 2.5 kA/cm^2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half-width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.
Additional Information
©1974 American Institute of Physics (Received 8 July 1974) The authors would like to thank Dr. Y. Ohtomo and Dr. O. Nakada of Central Research Laboratory, Hitachi, Ltd., for their continuous encouragement; Y. Sasaki of the same laboratory for his help in fabricating the diodes; and A. Gover of California Institute of Technology for his helpful discussions.Files
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