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Published February 1, 1982 | public
Journal Article Open

The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers

Abstract

Epitaxial growth of Ge on Si has been investigated by two techniques: vacuum deposition and chemical vapor deposition (CVD). Vacuum-deposited Ge layers (physical vapor deposition, PVD) on heated Si substrates (≤ 500 °C) have smooth surface morphologies with a surface crystalline quality which improves with Ge layer thickness. Layers prepared by the CVD technique at 500–600 °C are comparable with the PVD prepared layers. Main defects in both PVD and CVD layers are dislocations initiating at the Ge/Si interface. Chemical vapor-deposited Ge layers grown at a substrate temperature of 700–800 °C exhibit poor crystalline quality and often are polycrystalline. Chemical vapor-deposited layers grown at a substrate temperature of 900 °C, again are good quality epitaxial layers. In this case, in addition to dislocations, stacking faults are present. All the studied layers are highly conductive and p-type. The conduction and valence band discontinuities determined from electrical measurements are 0.05±0.04 eV and 0.39±0.04 eV, respectively.

Additional Information

Copyright © 1982 American Institute of Physics. Received 20 August 1981; accepted for publication 6 October 1981. The authors would like to thank J. O. McCaldin of Caltech for use of equipment and for discussions and encouragement during this study. The authors would also like to thank J. Washburn of the University of California, Berkeley, for useful discussions. The cooperation of the Bohmische Physical Society (B.M. Ullrich) is acknowledged. This work was supported in part by the Office of Naval Research (L.R. Cooper) and in part by the U. S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).

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August 22, 2023
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