Published July 1991
| Published
Journal Article
Open
Passivation of GaAs surface recombination with organic thiols
Abstract
Exposure of GaAs crystals to solutions of organic thiols resulted in substantial reductions in nonradiative GaAs surface recombination rates. This process yielded improvements in steady state photoluminescence signals that were comparable to those obtained after a Na₂S·9H₂O (aqueous) treatment. Use of a series of thiols indicated that the chemically important surface electrical trap levels behaved as a polarizable, electron deficient center. X-ray photoelectron spectroscopy indicated that the thiols did not remove excess As⁰ nor form detectable levels of As₂S₃-like phases, implying that neither of these factors is required for effective surface passivation chemistry.
Additional Information
© 1991 American Vacuum Society. Received 30 January 1991; accepted 22 March 1991. We thank the Department of Energy, Office of Basic Energy Sciences, for support of this work. We are grateful to C. Sandroff and E. Yablonovitch of Bellcore for several helpful discussions, to H. McMillan of Varian Associates for supplying the GaAs/AlGaAs sample used in this work, and to R.P. Vasquez of JPL and E.-H. Cirlin of Hughes Research Laboratories for use of the XPS instrumentation. This is Contribution No. 8392 from the Caltech Division of Chemistry and Chemical Engineering.Attached Files
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Additional details
- Eprint ID
- 12053
- Resolver ID
- CaltechAUTHORS:LUNjvstb91
- Department of Energy (DOE)
- Created
-
2008-10-21Created from EPrint's datestamp field
- Updated
-
2023-04-19Created from EPrint's last_modified field
- Other Numbering System Name
- Division of Chemistry and Chemical Engineering
- Other Numbering System Identifier
- 8392