Published April 15, 1992
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Journal Article
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Wet oxidation of GeSi at (700)C
Abstract
About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700-degrees-C in wet ambient. A uniform GexSi1-xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1-x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
Additional Information
© 1992 American institute of Physics. Received 9 December 1991;accepted for publication 13 January 1992. This work was supported by the Semiconductor Research Corporation under a coordinated research program between Caltech (91-ST-lOO).and at UCLA (91-SJ-088). We thank Dr. W. A. Goddard for a useful discussion, J. S. Chen for the transmission electron microscopy study, and R. Gorris for his technical assistance. E. W. Lee acknowledges the support of the Korean Ministry of Education.Files
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