Published January 1988
| Published
Journal Article
Open
Silicon resistor to measure temperature during rapid thermal annealing
- Creators
- Lim, B. S.
- Ma, E.
- Nicolet, M-A.
- Nathan, M.
Abstract
A resistor composed of a piece of Si wafer and two thin silver wires attached to it, can reliably sense the temperature during rapid thermal annealing (RTA). As constant electric current passes through the Si piece, the resistivity change of Si with temperature produces a voltage signal that can be readily calibrated and converted to an actual temperature of the samples. An accuracy better than ±10 °C is achieved between 300° and 600 °C.
Additional Information
Copyright © 1988 American Institute of Physics. Received 22 December 1986; accepted 2 September 1987. The authors thank R. Gorris and G. Mendenilla for technical assistance. Financial support from the National Science Foundation-Materials Research Group under Contract No. DMR-842119 is gratefully acknowledged. One of the authors, B.S. Lim, would like to acknowledge partial financial support from the Korean Science and Engineering Foundation.Attached Files
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Additional details
- Eprint ID
- 13028
- Resolver ID
- CaltechAUTHORS:LIMrsi88
- DMR-842119
- National Science Foundation
- Korea Science and Engineering Foundation
- Created
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2009-01-15Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field