Published April 1, 1969
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Journal Article
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Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region
Abstract
Optical reflection spectra of crystalline, sputtered, and ion implanted silicon specimens are presented. Characteristic aspects of the spectra of ion implanted specimens are related to lattice damage.
Additional Information
© 1969 The American Institute of Physics. Received 15 November 1968; revised 6 March 1969. We would like to thank R. Hart and D. Jamba of these laboratories for preparing the ion implanted specimens, H. Garvin and M. Braunstein for supplying the sputtered silicon specimens, E. Wolf for analyses with the scanning electron microscope, and A. Rabideau for technical assistance. We are indebted to J. W. Mayer, O. J. March, G. S. Picus, and R. Hart for many helpful discussions.Attached Files
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