HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure
- Creators
- Kuech, T. F.
- McCaldin, J. O.
Abstract
HgTe-CdTe lattice-matched heterojunctions were formed by the epitaxial growth of HgTe on CdTe substrates using a low-temperature metal organic chemical vapor deposition technique. These heterojunctions combine features of the Schottky barrier structure, due to the high carrier concentrations found in the semimetallic HgTe, with the structural perfection present in a lattice-matched heterojunction. The measured Schottky barrier height varied from 0.65 to 0.92 eV depending on the details of the heterojunction growth procedure used. This dependence may be due to the formation of an inversion layer in the CdTe at the interface. Presence of such an inversion layer suggests that the valence band discontinuity between HgTe and CdTe is small, in agreement with previous theoretical estimates.
Additional Information
© 1982 American Institute of Physics. Received 4 September 1981; accepted for publication 17 December 1981. The authors wish to thank the Office of Naval Research (L.R. Cooper) and the Defense Advanced Research Projects Agency (R. Reynolds) for support of the work. The authors would also like to thank T.C. McGill and Reuben Collins for the many discussions.Files
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Additional details
- Eprint ID
- 10922
- Resolver ID
- CaltechAUTHORS:KUEjap82
- Created
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2008-06-19Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field