Published March 30, 1987
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Journal Article
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Reactively sputtered RuO2 diffusion barriers
- Creators
- Kolawa, E.
- So, F. C. T.
- Pan, E. T-S.
- Nicolet, M.-A.
Abstract
The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C.
Additional Information
© 1987 American Institute of Physics. Received 19 November 1986; accepted 26 January 1987. The authors gratefully acknowledge technical assistance from R. Gorris, help in scanning electron microscopy analysis from Rindge Shima, and manuscript preparation by A. Collinwood. Financial support from the Army Research Office under contract number DAAG29-85-K-0192 is also gratefully acknowledged.Files
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Additional details
- Eprint ID
- 2944
- Resolver ID
- CaltechAUTHORS:KOLapl87
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