Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering
- Creators
- Kittl, J. A.
- Nieh, C. W.
- Lee, D. S.
- Johnson, W. L.
Abstract
We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7–delta thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7–delta films were grown both on (100) SrTiO3 and on (100) MgO substrates following the stacking sequence of the ``123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The c-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O2. The transition temperatures were found to decrease with the enlargement of the c-axis lattice parameter. A clear correlation between growth temperature and the value of the c-axis lattice parameter was observed. The c-axis lattice parameter and the x-ray linewidth of Bragg reflections with the G vector along the c-axis were also found to be correlated. This suggests a relationship between the c-axis lattice parameter and the structural coherence of the epitaxial films.
Additional Information
Copyright © 1990 American Institute of Physics (Received 30 January 1990; accepted 17 April 1990) We would like to thank B. Stevens for the RBS analysis of the films. This research was supported by the National Science Foundation, Materials Research Groups, Grant. DMR-8811795, the Hughes Research Laboratories, Malibu, California, and a gift from the Ford Aerospace Division.Files
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Additional details
- Eprint ID
- 3507
- Resolver ID
- CaltechAUTHORS:KITapl90
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2006-06-09Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field