Low-temperature ion beam mixing of Pt and Si markers in Ge

Abstract

The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers.

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