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Published January 15, 1985 | Published
Journal Article Open

Phased arrays of buried-ridge InP/InGaAsP diode lasers

Abstract

Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid phase epitaxy. The arrays consist of index-guided, buried-ridge lasers which are coupled via their evanescent optical fields. This index-guided structure makes it possible to avoid the occurrence of lower gain in the interchannel regions. As a result, the buried-ridge arrays oscillate mainly in the fundamental supermode, which yields single lobed, narrow far-field patterns. Single lobed beams less than 4° in width were obtained from buried-ridge InP/InGaAsP phased arrays up to more than twice the threshold current.

Additional Information

© 1985 American Institute of Physics. Received 18 October 1984; accepted 2 November 1984. The research reported in this paper is supported through contracts with the National Science Foundation, the Office of Naval Research, and the Air Office of Scientific Research. E. Kapon would like to acknowledge the support of a Weizmann Postdoctoral Fellowship.

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