Summary Abstract: Band offsets at HgTe CdTe interfaces
Abstract
Band offsets are an important physical characteristic of any heterojunction. The HgTe-CdTe offset is particularly important since it affects the properties of the superlattice which is under much investigation theoretically and experimentally (1,2). To measure band offsets an abrupt interface is necessary, requiring limited interdiffusion between each material. This requires a low temperature technique to grow a HgTe epitaxial layer on CdTe. Conventional Te-rich liquid-phase epitaxy (LPE) has too much interdiffusion for a menaingful measurement. Metal-organic chemical vapor deposition (MOCVD) which can be done at 325 °C possibly has too much interdiffusion (3). Up until now the lowest temperature growth technique has been molecular beam epitaxy (MBE) which grows in the range 120-200 °C with best epitaxy near 200 °C (4). Below is a description of a novel Hg-rich LPE technique which also gives growth in the range 125-200 °C.
Additional Information
© 1985 American Vacuum Society. (Received 6 March 1985; accepted 24 April 1985) The authors would like to acknowledge Jim Hawkey of II-VI Corp. and Carlos Castro and Don Weirauch of Texas Instruments for providing CdTe substrates and are grateful to R.T. Collins and T.F. Kuech for helpful discussions and to A.H. Hamdi for x-ray measurements. One of us (M.B.J.) received financial assistance from the Natural Science and Engineering Research Council of Canada. This work was supported in part by the Army Research Office under Contract No. DAAG79-83-K-0104.Files
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Additional details
- Eprint ID
- 10414
- Resolver ID
- CaltechAUTHORS:JOHjvstb85
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2008-05-02Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field