Published September 1, 1983
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Kinetics of TiSi2 formation by thin Ti films on Si
Abstract
Silicide formation with Ti deposited on single crystal Si and Ti deposited on amorphous Si layers sequentially without breaking the vacuum was investigated using backscattering spectrometry and glancing-angle x-ray diffraction. For Ti deposited on amorphous Si, TiSi2 was formed with a rate proportional to (time)^1/2 and an activation energy of 1.8±0.1 eV. For Ti deposited on single crystal Si, the reaction rate was slower and the silicide layer was nonuniform in thickness. We attribute the difference in behavior to the presences of interfacial impurities in the case where Ti was deposited on single crystal Si.
Additional Information
© 1983 American Institute of Physics. Received 28 March 1983; accepted 12 May 1983. We acknowledge B.Y. Tsaur for the initiation of the present experiments, R. Fernandez and R. Gorris for the technical assistance, and L. Rathbun for Auger measurements. The work was supported in part by the Office of Naval Research (L.R. Cooper) and by NSF through the National Research and Resource Facility for Submicron Structures.Files
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