Published July 1, 1997
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Measurement of the stimulated carrier lifetime in semiconductor optical amplifiers by four-wave mixing of polarized ASE noise
Abstract
We present a simple experiment aimed at measuring the stimulated carrier lifetime in semiconductor optical amplifiers (SOA's). The technique relies on polarization-resolved nearly degenerate four-wave mixing (FWM) of a laser source with an amplified spontaneous emission (ASE) noise source. The method can quickly characterize the bandwidth performance of active layers for application in a cross-gain or cross-phase wavelength converter.
Additional Information
© Copyright 1997 IEEE. Reprinted with permission. Manuscript received January 22, 1997; revised April 4, 1997. This work was supported by ARPA under Grant DAAL 01-94-k-03430, by the National Science Foundation under Grant ECS 9412862, and by the NORTHROP Corporation. The authors thank Dr. N. Kwong and Dr. T. Schrans, ORTEL, Corp., for the loan of the DFB laser and the PIN detector used in this experiment.Files
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- CaltechAUTHORS:HUNieeeptl97b
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