Published March 1986
| Published
Journal Article
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Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si
Abstract
We have made photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 on non-degenerate n-(111) Si substrates, for the cases of type A and type B epitaxy, on several samples with NiSi2 layer thicknesses ranging from 70 to 600 Å. Nominal doping in all Si substrates was about 1.5 x 10^15 cm^-3. The photoresponse measurements were performed on broad-area-coverage regions of NiSi2 on Si. No processing subsequent to growth took place on these silicide layers.
Additional Information
© 1986 American Vacuum Society. Received 15 August 1985; accepted 6 December 1985. The authors wish to acknowledge the support of the Defense Advanced Research Projects Agency monitored by ONR under Contract No. N00014-84-C-0083.Attached Files
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Additional details
- Eprint ID
- 12190
- Resolver ID
- CaltechAUTHORS:HAUjvstb86
- Defense Advanced Research Projects Agency
- N00014-84-C-0083
- Office of Naval Research
- Created
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2008-10-28Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field