Published January 15, 1982
| public
Journal Article
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Bistability and negative resistance in semiconductor lasers
- Creators
- Harder, Ch.
- Lau, K. Y.
- Yariv, A.
Abstract
Experimental results of a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain are presented. Measurements reveal a negative differential resistance over the absorbing section. Depending on the source impedance of the dc current source driving the absorbing section, this negative resistance can lead to (i) bistability with a very large hysteresis in the light-current characteristic without self-pulsation or (ii) a small hysteresis with self-pulsations at microwave frequencies. An analysis, which includes the electrical part of the device, leads to an explanation of self-pulsations in inhomogeneously pumped lasers without having to rely on a sublinear gain dependence on injected carrier concentration.
Additional Information
Copyright © 1982 American Institute of Physics. (Received 8 September 1981; accepted for publication 3 November 1981) This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program, and by the Army Research Office.Files
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Additional details
- Eprint ID
- 11018
- Resolver ID
- CaltechAUTHORS:HARapl82
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2008-06-23Created from EPrint's datestamp field
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