Integrated phased array systems in silicon
Abstract
Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.
Additional Information
"©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE." Manuscript received August 2, 2004; revised March 17, 2005. The authors would like to thank IBM Corp. for chip fabrication and Lee Center for Advance Networking for support. The authors would also like to thank R. Aparicio, D. Lu, M. Morgan, B. Analui, and Prof. D. Rutledge for valuable technical discussions. N. Wadefalk and A. Shen assisted in PCB and microwave package preparation. R. Chunara provided the original version of the code used for programming the phased array receiver.Files
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Additional details
- Eprint ID
- 824
- Resolver ID
- CaltechAUTHORS:HAJprocieee05
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2005-10-10Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field