Published March 1, 1981
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Journal Article
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Epitaxial growth of amorphous Ge films deposited on single-crystal Ge
Abstract
The epitaxial growth of amorphous Ge films deposited onto 110 Ge substrate is demonstrated. Substrate cleaning prior to deposition involves only conventional chemical procedures. The growth appears to be a strong function of the interface cleanliness. Two different growth mechanisms are observed: (a) a direct transition from amorphous to single-crystalline layer and (b) the growth involving the transition of amorphous to polycrystals to single crystal.
Additional Information
Copyright © 1981 American Institute of Physics. Received 20 October 1980; accepted for publication 2 December 1980. We would like to thank R. Fernandez and R. Gorris for their technical assistance, Dr. J. W. Mayer for clarifying discussions, and Dr. G. Foti for supplying the Ge wafers. The partial financial support by the Office of Naval Research is thankfully acknowledged (L. R. Cooper and G. B. Wright).Files
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