Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Creators: Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

Abstract

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.

Additional Information

© 1989 American Institute of Physics. Received 20 March 1989; accepted 12 May 1989. We would like to acknowledge helpful discussions with Paula Grunthaner, True-Lin Lin, Brian Hunt, and Walter Gibson. The research described in this letter was carried out by the Jet Propulsion Laboratory (JPL), California Institute of Technology, and was supported by the Strategic Defense Initiative Organization, Innovative Science and Technology Office and the National Aeronautics and Space Administration. The work was performed as part of JPL's Center for Space Microelectronics Technology. Q.F. Xiao and S. Hashimoto acknowledge Hamamatsu Corporation for generously providing them with high-resolution detector diodes used for RBS measurements. TEM analysis was partially supported by the National Science Foundation-Materials Research Group under grant No. DMR 8811795.

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