Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published March 12, 2001 | Published
Journal Article Open

SiGeC/Si superlattice microcoolers

Abstract

Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3omega method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 µm^2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm^2.

Additional Information

© 2001 American Institute of Physics. (Received 8 November 2000; accepted 24 January 2001) This work is supported by DARPA HERETIC program and the Army Research Office.

Attached Files

Published - FANapl01.pdf

Files

FANapl01.pdf
Files (153.5 kB)
Name Size Download all
md5:ece092511ee3963669a26ac670b70a1a
153.5 kB Preview Download

Additional details

Created:
August 21, 2023
Modified:
October 13, 2023