Independently contacted two-dimensional electron systems in double quantum wells

Abstract

A new technique for creating independent ohmic contacts to closely spaced two-dimensional electron systems in double quantum well (DQW) structures is described. Without use of shallow diffusion or precisely controlled etching methods, the present technique results in low-resistance contacts which can be electrostatically switched between the two-conducting layers. The method is demonstrated with a DQW consisting of two 200 Å GaAs quantum wells separated by a 175 Å AlGaAs barrier. A wide variety of experiments on Coulomb and tunnel-coupled 2D electron systems is now accessible.

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