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Published November 1996 | public
Journal Article Open

Lithographic band gap tuning in photonic band gap crystals

Abstract

We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (> 95%) mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response.

Additional Information

©1996 American Vacuum Society (Received 10 June 1996; accepted 17 August 1996) This work was supported by the National Science Foundation under Grant No. ECS-9310681. The authors also gratefully acknowledge helpful suggestions from Reynold Johnson and Andrew Cleland.

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