Published June 1981
| Published
Journal Article
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Thermal stability of titanium nitride for shallow junction solar cell contacts
Abstract
To demonstrate the thermal stability of titanium nitride as a high-temperature diffusion barrier, the TiN-Ti-Ag metallization scheme has been tested on shallow-junction (~2000 Å) Si solar cells. Electrical measurements on reference samples with the Ti-Ag metallization scheme show serious degradation after a 600 °C, 10-min annealing. With the TiN-Ti-Ag scheme, no degradation of cell performance is observed after the same heat treatment if the TiN layer is >~1700 Å. The glass encapsulation of cells by electrostatic bonding requires such a heat treatment.
Additional Information
© 1981 American Institute of Physics. (Received 18 September 1980; accepted for publication 1 March 1981) At Caltech, this work was supported in part by the Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and M.B. Chamberlain).Attached Files
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Additional details
- Eprint ID
- 10874
- Resolver ID
- CaltechAUTHORS:CHEjap81
- Department of Energy (DOE)
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2008-06-14Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field