Published December 1, 2000
| Published
Journal Article
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Tunnel switch diode based on AlSb/GaSb heterojunctions
Abstract
We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact.
Additional Information
© 2000 American Institute of Physics (Received 13 July 2000; accepted 17 August 2000) The authors thank E. S. Daniel, D. Z.-Y. Ting, W. Frensley, and K. Smith for their fruitful discussions on TSD simulations. This work is supported in part by the Office of Naval Research under Grant No. N00014-98-1-0567.Attached Files
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Additional details
- Eprint ID
- 2481
- Resolver ID
- CaltechAUTHORS:CHEjap00
- N00014-98-1-0567
- Office of Naval Research (ONR)
- Created
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2006-04-05Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field