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Published March 1, 1981 | public
Journal Article Open

Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

Abstract

Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-mm-wide active region.

Additional Information

Copyright © 1981 American Institute of Physics. Received 13 October 1980; accepted for publication 18 December 1980. The authors wish to thank P. Koen of Caltech for taking the scanning electron microscope (SEM) pictures. This work is supported by the Office of Naval Research and the National Science Foundation.

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August 22, 2023
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