Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published July 1999 | public
Journal Article Open

Piezoelectric fields in nitride devices

Abstract

We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojunction field effect transistors, Schottky diodes with strained layers for Schottky height engineering, and III-nitride single quantum wells. Calculations that included energy considerations resulted in good agreement between predicted and observed field and charge distributions for the heterojunction fields-effect transistors structure.

Additional Information

©1999 American Vacuum Society. (Received 19 January 1999; accepted 3 May 1999) This work has been supported by the Defense Advanced Research Projects Administration and Electric Power Research Institute monitored under ONR Grant No. MDA972-98-1-0005.

Files

BEAjvstb99.pdf
Files (72.2 kB)
Name Size Download all
md5:03b289d836ed7caf05f2a557c63d03a2
72.2 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 13, 2023