Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published September 1983 | Published
Journal Article Open

Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>

Abstract

Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transport through a silicide layer on a substrate during thermal oxidation at 700–900 °C. The SiO2 growth from PdSi, Pd2Si, CoSi2, and NiSi2 films on is a process limited by the diffusion of the oxidant from the ambient gas to the silicide/oxide interface. Possible diffusion processes through the silicide that supply Si to the growing SiO2 layer, but keep the silicide stoichiometry intact, are discussed. Backscattering spectrometry is used to monitor the marker position in the silicide layer. We find that the diffusing species during oxidation correlate with the moving species during silicide formation.

Additional Information

Copyright © 1983 American Institute of Physics. Received 22 November 1982; accepted 9 March 1983. The authors wish to thank the reviewer for very constructive criticism of the manuscript, Dr. K.N. Tu of IBM, Yorktown Heights, for his comments, and R. Gorris and R. Fernandez (Caltech) for technical assistance. The work was executed under the UR Fund of the Böhmische Physical Society (B.M. Ullrich), and was partially supported by Solid-State Devices, Inc. (A. Applebaum, President).

Attached Files

Published - BARjap83.pdf

Files

BARjap83.pdf
Files (999.8 kB)
Name Size Download all
md5:b4ce0f6d96ebcbe78f61e81c6c7061f5
999.8 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 17, 2023