Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published March 1, 1999 | public
Journal Article Open

High voltage (450 V) GaN Schottky rectifiers

Abstract

We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10^–5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2 ± 0.7) × 10^6 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.

Additional Information

©1999 American Institute of Physics. (Received 31 August 1998; accepted 23 December 1998) This work was supported by DARPA and monitored by the ONR under Grant No. N00014-92-J-1845, and was also supported by DARPA/EPRI and monitored by the ONR under Grant. No. MDA972-98-1-0006.

Files

BANapl99.pdf
Files (111.0 kB)
Name Size Download all
md5:f70771db410731d8cf7007edd6b8416a
111.0 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 13, 2023