Transient extreme ultraviolet measurement of element-specific charge transfer dynamics in multiple-material junctions
Abstract
The absorption of solid state materials in complex photonic and optoelectronic devices overlap in the visible spectrum. Due to the overlap of spectral features, ultrafast measurements of charge carrier dynamics and transport is obscured. Here, the element specificity of transient extreme ultraviolet (XUV) spectroscopy is advanced as a probe for studying photoexcited charge transport in multiple-material junctions. The core-hole excited by the XUV transitions also imparts structural information on to the probed electronic transition. Transient XUV can therefore measure electron and averaged phonon dynamics for each elemental species in a junction. Application to polaron measurement in α-Fe_2O_3, valley-specific scattering in Si, and charge transfer in a nanoscale Ni-TiO_2-Si junction will be discussed.
Additional Information
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE). The represented and cited work was done by Scott Cushing and colleagues while in Stephen Leone's laboratory at the University of California, Berkeley. Scott Cushing was support by the Department of Energy, Office of Energy Efficiency and Renewable Energy (EERE) Postdoctoral Research Award under the EERE Solar Energy Technologies Office during this time. In writing this paper, Jonathan Michelsen was supported by the Institute Fellowship, California Institute of Technology.Attached Files
Published - 109262A.pdf
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Additional details
- Eprint ID
- 98116
- Resolver ID
- CaltechAUTHORS:20190822-134051535
- Department of Energy (DOE)
- Caltech
- Created
-
2019-08-22Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 10926