Ultrafast imaging of surface-exclusive carrier dynamics in silicon

Abstract

Understanding the dynamics of charge carriers at the semiconductor surfaces and interfaces is fundamental to the further development of photocatalytic, photovoltaic, and optoelectronic devices. Here, we study the surface photovoltage (SPV) dynamics in intrinsic and doped silicon using scanning ultrafast electron microscopy (SUEM). SUEM is a surface sensitive technique that allows the direct imaging of carriers at ultrafast time scales, thereby elucidating their spatiotemporal response to optical excitation. We first discuss the mechanism of image formation in SUEM. We then use these images to show that carrier dynamics on the silicon surface depends strongly on the doping type and concentration, though not always dictated by SPV. The numerical simulation of the drift-diffusion model suggests that this is due to the formation of complex transport processes, driven by intrinsic and photoinduced fields in the excited volume. This work refines our current understanding of the surface-exclusive dynamics in semiconductors by introducing a means to study their evolution in space and time and providing a model to explain the underlying mechanism.

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