Published May 2004
| Published
Book Section - Chapter
Open
Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells
Abstract
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples.
Additional Information
© 2004 Optical Society of America.Attached Files
Published - 01361691.pdf
Files
01361691.pdf
Files
(121.8 kB)
Name | Size | Download all |
---|---|---|
md5:53ba5fc381c16b190d068936d97c4198
|
121.8 kB | Preview Download |
Additional details
- Eprint ID
- 93698
- Resolver ID
- CaltechAUTHORS:20190311-145611556
- Created
-
2019-03-11Created from EPrint's datestamp field
- Updated
-
2019-10-03Created from EPrint's last_modified field