Published June 2018
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Book Section - Chapter
Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier
Abstract
In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.
Additional Information
© 2018 IEEE. The work of M. Varonen was supported through the Academy of Finland under Academy Research Fellow project MIDERI.Additional details
- Eprint ID
- 91747
- DOI
- 10.1109/mwsym.2018.8439505
- Resolver ID
- CaltechAUTHORS:20181212-160922767
- MIDERI
- Academy of Finland
- Created
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2018-12-13Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field