Hybrid Integration of a Tunneling Diode and a 1310 nm DFB Semiconductor Laser

Abstract

We experimentally demonstrate a InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions were explored in both electrical and optical output characteristics. The electrical and optical bistability controlled by the voltage through the tunneling diode were measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop was formed and an optical power on/off ratio of 17 dB was obtained. A side-mode suppression ratio of the integrated device in the "on" state is up to 43 dB. Compared to directly controlled by a voltage source, the tunneling diode can switch on/off the laser within a very small voltage range.

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