Published 1976
| public
Book Section - Chapter
Analysis of Ga_(1-x)Al_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering
- Creators
- Gamo, K.
- Inada, T.
- Samid, I.
- Lee, C. P.
- Mayer, J. W.
- Others:
- Meyer, O.
- Linker, G.
- Käppeler, F.
Abstract
Proton backscattering at < 1 MeV has been used to measure Ga_(1-x)A1_xAs heteroepitaxial layers on GaAs that are used in optoelectronic applications. By evaporating Ge on A1, we have obtained relative values of the stopping cross-section of A1 to Ge. Deposition of Ge layers on Ga_(1-x)A1_xAs layers removed problems associated with secondary electron suppression. The experimental data on composition compare well with analysis by other techniques.
Additional Information
© 1976 Springer Science+Business Media New York. Work supported in part by National Science Foundation.Additional details
- Eprint ID
- 89308
- Resolver ID
- CaltechAUTHORS:20180830-102916110
- NSF
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2018-08-30Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field