Published April 10, 1995
| Published
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Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si
- Creators
- Paul, P. H.
- Capewell, D. L.
- Goodwin, D. G.
- Other:
- Dubowski, Jan J.
Abstract
Planar laser induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm^2. The SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.
Additional Information
© 1995 Society of Photo-Optical Instrumentation Engineers (SPIE). PHP acknowleges support from the United States Department of Energy, Office of Basic Energy Sciences, Chemical Sciences Division. DLC and DGG acknowledge partial support from a National Science Foundation Presidential Young Investigator grant.Attached Files
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Additional details
- Eprint ID
- 88277
- Resolver ID
- CaltechAUTHORS:20180725-160851247
- Department of Energy (DOE)
- NSF
- Created
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2018-07-30Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 2403