Power-amplifier modules covering 70-113 GHz using MMICs
Abstract
A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-µm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper.
Additional Information
© 2001 IEEE. Manuscript received March 27, 2000; revised August 23, 2000. This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under a Contract with the National Aeronautics and Space Administration. The authors would like to thank P. P. Huang, TRW, Redondo Beach, CA, for the consultation of the amplifier design and the members of the RF Product Center, TRW, Redondo Beach, CA, for their technical support. Thanks also go to N. Erickson, University of Massachusetts, Amherst, for supplemental amplifier measurements.Attached Files
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- 87487
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- CaltechAUTHORS:20180629-144417876
- NASA/JPL/Caltech
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2018-06-29Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field