Published May 2017
| public
Book Section - Chapter
Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy
Abstract
Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the Γ, L, and X valleys of silicon.
Additional Information
© 2017 Optical Society of America.Additional details
- Eprint ID
- 87423
- DOI
- 10.1364/CLEO_AT.2017.ATh3C.5
- Resolver ID
- CaltechAUTHORS:20180627-160646605
- Created
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2018-06-28Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field