Published October 23, 1980
| Published
Journal Article
Open
AlGaAs heterostructure injection laser S.C.R.
- Creators
- Katz, J.
- Bar-Chaim, N.
- Margalit, S.
- Yariv, A.
Abstract
The operation of a gate-controlled p-n-p-n injection laser device has been demonstrated. The switching is accomplished by an electrical control signal. The threshold current of the laser incorporated into the device is about 100 mA, and its optical properties are similar to those of the Be-implanted laser reported recently.
Additional Information
© 1980 The Institution of Electrical Engineers. 27th August 1980.Attached Files
Published - 04245369.pdf
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