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Published April 1980 | Published
Journal Article Open

Investigation of titanium-nitride layers for solar-cell contacts

Abstract

Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon, Backscattering analysis (2-MeV He+, RBS) indicates that the integrity of the system is basically preserved during annealing at 600° for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (<5 at %) a resistivity of 170 µΩ . cm has been found.

Additional Information

© 1980 IEEE. Manuscript received August 16, 1979; revised December 11, 1979. This research was supported initially by the Jet Propulsion Laboratory (R. Lutwack) and subsequently by the Department of Energy, monitored by Sandia Laboratories, Albuquerque, NM.

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August 19, 2023
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